≤ +500 mV, GNEG = 0 V, –10 dB to +30 dB gain range, R
L
= 500 Ω, and C
L
= 5 pF, unless
otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Noise Spectral Density
1
Noise Figure
1 dB Compression Point
Peak Input Voltage
OUTPUT CHARACTERISTICS
−3 dB Bandwidth
Slew Rate
Peak Output
2
Output Impedance
Output Short-Circuit Current
Group Delay Change vs. Gain
Group Delay Change vs. Frequency
Differential Gain
Differential Phase
Total Harmonic Distortion
Third-Order Intercept
ACCURACY
Gain Accuracy, f = 100 kHz; Gain (dB) = (40 V
G
+ 10) dB
T
MIN
to T
MAX
Gain, f = 10.7 MHz
Output Offset Voltage
3
T
MIN
to T
MAX
Output Offset Variation vs. V
G
T
MIN
to T
MAX
GAIN CONTROL INTERFACE
Gain Scaling Factor
T
MIN
to T
MAX
GNEG, GPOS Voltage Range
Input Bias Current
Input Offset Current
Differential Input Resistance
Response Rate
POWER SUPPLY
Specified Operating Range
Quiescent Current
T
MIN
to T
MAX
1
Conditions
Pin 3 to Pin 4
Input short-circuited
f = 10 MHz, gain = maximum, R
S
= 10 Ω
f = 10 MHz, gain = maximum, R
S
= 10 Ω
V
OUT
= 100 mV rms
R
L
≥ 500 Ω
R
L
≥ 500 Ω
f ≤ 10 MHz
f = 3 MHz; full gain range
V
G
= 0 V; f = 1 MHz to 10 MHz
f = 10 MHz, V
OUT
= 1 V rms
f = 40 MHz, gain = maximum, R
S
= 50 Ω
−500 mV ≤ V
G
≤ +500 mV
V
G
= -0.5 V
V
G
= 0.0 V
V
G
= 0.5 V
V
G
= 0 V
−500 mV ≤ V
G
≤ +500 mV
100 kHz
10.7 MHz
Min
97
Typ
100
2
1.3
8.8
−11
±1.4
90
275
±3.0
2
50
±2
±2
0.2
0.2
−60
15
±0.5
−9.0
+10.5
+30.3
Max
103
Unit
Ω
pF
nV/√Hz
dB
dBm
V
MHz
V/µs
V
Ω
mA
ns
ns
%
Degree
dBc
dBm
±2
±2.5
−1
−1.5
−10.3
+9.5
+29.3
+1
+1.5
−8.0
+11.5
+31.3
20
30
20
30
40.6
42
39.9
+2.0
250
dB
dB
dB
dB
dB
mV
mV
mV
mV
dB/V
dB/V
dB/V
V
nA
nA
MΩ
dB/µs
V
mA
mA
4
39.4
38
38.7
−1.2
50
40
39.3
100
10
50
80
12.5
Pin 1 to Pin 2
Full 40 dB gain change
±4.75
±6.3
17
20
Typical open or short-circuited input; noise is lower when system is set to maximum gain and input is short-circuited. This figure includes the effects of both voltage
and current noise sources.
2
Using resistive loads of 500 Ω or greater or with the addition of a 1 kΩ pull-down resistor when driving lower loads.
3
The dc gain of the main amplifier in the AD603 is ×35.7; therefore, an input offset of 100 µV becomes a 3.57 mV output offset.
4
GNEG and GPOS, gain control, and voltage range are guaranteed to be within the range of −V
S
+ 4.2 V to +V
S
− 3.4 V over the full temperature range of −40°C to +85°C.
Rev. K | Page 3 of 24
AD603
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage ±V
S
Internal Voltage VINP (Pin 3)
GPOS, GNEG (Pin 1 and Pin2)
Internal Power Dissipation
Operating Temperature Range
AD603A
AD603S
Storage Temperature Range
Lead Temperature (Soldering, 60 sec)
Rating
±7.5 V
±2 V Continuous
±V
S
for 10 ms
±V
S
400 mW
−40°C to +85°C
−55°C to +125°C
−65°C to +150°C
300°C
Data Sheet
Table 3. Thermal Characteristics
Package Type
8-Lead SOIC
8-Lead CERDIP
θ
JA
155
140
θ
JC
33
15
Unit
°C/W
°C/W
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
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