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QD2147HL

Description
Standard SRAM, 4KX1, 70ns, NMOS, CDIP18, HERMETIC SEALED, CERAMIC, DIP-18
Categorystorage    storage   
File Size140KB,4 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric View All

QD2147HL Overview

Standard SRAM, 4KX1, 70ns, NMOS, CDIP18, HERMETIC SEALED, CERAMIC, DIP-18

QD2147HL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeDIP
package instructionDIP, DIP18,.3
Contacts18
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
Other featuresAUTOMATIC POWER-DOWN
I/O typeSEPARATE
JESD-30 codeR-GDIP-T18
JESD-609 codee0
length22.86 mm
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of ports1
Number of terminals18
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4KX1
Output characteristics3-STATE
ExportableNO
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Minimum standby current4.5 V
Maximum slew rate0.14 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyNMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1

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