Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | Vishay |
| package instruction | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain-source on-resistance | 12 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| VDDQ1CHP-2 | VDDQ1CHP | VDDQ1CHP-1 | VDDQ2CHP | VDDQ2CHP-1 | VDDQ2CHP-2 | |
|---|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Maker | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay |
| package instruction | UNCASED CHIP, S-XUUC-N2 | , | UNCASED CHIP, S-XUUC-N2 | , | UNCASED CHIP, S-XUUC-N2 | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Configuration | SINGLE | Single | SINGLE | Single | SINGLE | SINGLE |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| surface mount | YES | YES | YES | YES | YES | YES |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| ECCN code | EAR99 | - | EAR99 | - | EAR99 | EAR99 |
| Minimum drain-source breakdown voltage | 200 V | - | 200 V | - | 200 V | 200 V |
| Maximum drain-source on-resistance | 12 Ω | - | 12 Ω | - | 20 Ω | 20 Ω |
| JESD-30 code | S-XUUC-N2 | - | S-XUUC-N2 | - | S-XUUC-N2 | S-XUUC-N2 |
| Number of components | 1 | - | 1 | - | 1 | 1 |
| Number of terminals | 2 | - | 2 | - | 2 | 2 |
| Package body material | UNSPECIFIED | - | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED |
| Package shape | SQUARE | - | SQUARE | - | SQUARE | SQUARE |
| Package form | UNCASED CHIP | - | UNCASED CHIP | - | UNCASED CHIP | UNCASED CHIP |
| Certification status | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified |
| Terminal form | NO LEAD | - | NO LEAD | - | NO LEAD | NO LEAD |
| Terminal location | UPPER | - | UPPER | - | UPPER | UPPER |
| transistor applications | SWITCHING | - | SWITCHING | - | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | - | SILICON | SILICON |
京公网安备 11010802033920号
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