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VDDQ2CHP

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size47KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VDDQ2CHP Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

VDDQ2CHP Parametric

Parameter NameAttribute value
MakerVishay
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
surface mountYES
Base Number Matches1

VDDQ2CHP Related Products

VDDQ2CHP VDDQ1CHP VDDQ1CHP-1 VDDQ1CHP-2 VDDQ2CHP-1 VDDQ2CHP-2
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker Vishay Vishay Vishay Vishay Vishay Vishay
package instruction , , UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, S-XUUC-N2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Configuration Single Single SINGLE SINGLE SINGLE SINGLE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1
ECCN code - - EAR99 EAR99 EAR99 EAR99
Minimum drain-source breakdown voltage - - 200 V 200 V 200 V 200 V
Maximum drain-source on-resistance - - 12 Ω 12 Ω 20 Ω 20 Ω
JESD-30 code - - S-XUUC-N2 S-XUUC-N2 S-XUUC-N2 S-XUUC-N2
Number of components - - 1 1 1 1
Number of terminals - - 2 2 2 2
Package body material - - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape - - SQUARE SQUARE SQUARE SQUARE
Package form - - UNCASED CHIP UNCASED CHIP UNCASED CHIP UNCASED CHIP
Certification status - - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - - NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location - - UPPER UPPER UPPER UPPER
transistor applications - - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - - SILICON SILICON SILICON SILICON
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