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L850-66-60

Description
10.91mm, 1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT, COMPACT, TO-66, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size87KB,1 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Environmental Compliance  
Download Datasheet Parametric View All

L850-66-60 Overview

10.91mm, 1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT, COMPACT, TO-66, 2 PIN

L850-66-60 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEpitex Inc
package instructionROHS COMPLIANT, COMPACT, TO-66, 2 PIN
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Maximum forward current1.2 A
Number of functions1
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Optoelectronic device typesINFRARED LED
Nominal output power1500 mW
peak wavelength850 nm
shapeROUND
size10.91 mm
Base Number Matches1
epitex
Opto-Device & Custom LED
Infrared illuminator
L850-66-60
Lead ( Pb ) Free Product – RoHS Compliant
L850-66-60
epoxy lens type Infrared illuminator
L850-66-60 is a wide viewing and extremely high output power illuminator assembled
with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66
with AlN ceramics and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking
to improve thermal conductive efficiency.
Features
♦Outer
dimension (Unit: mm)
1) High reliability
2) Compact (TO-66) package
3) High output power at 850nm
♦Applications
1) For IR search light
2) For CCD lighting
3) For night vision light source
Specifications
Specifications
1) Product name
2) Spec. No.
3) Chip
(1) Material
(2) Peak wavelength
4) Package
(1) Stem
(2) Lens
IR illuminator
L850-66-60
AlGaAs
850nm
TO-66 stem with AlN
Clear silicone and epoxy lens
♦Absolute
Maximum Ratings
Item
Symbol Maximum Rated Value Unit
Ambient Temp.
Power Dissipation
PD
7.5
W
Ta=25°C
Forward Current
I
F
1200
mA
Ta=25°C
Pulse Forward Current
I
FP
6
A
Ta=25°C
Reverse Voltage
V
R
50
V
Ta=25°C
Operating Temperature
T
OPR
-30 ~ +80
°C
-30 ~ +110
°C
Storage Temperature
T
STG
Soldering Temperature
T
SOL
240
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=1us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical
Characteristics
Item
Symbol Condition
Minimum
Typical Maximum
Unit
Total Radiated Power
P
O
I
F
=800mA
1500
mW
Total Radiated Power
P
O
I
FP
=5A
9000
mW
Radiant Intensity
I
E
I
F
=800mA
400
mW/sr
Forward Voltage
V
F
I
F
=800mA
7.50
V
Reverse Current
V
R
I
R
=10uA
50
V
Peak Wavelength
840
850
860
nm
I
F
=800mA
λ
P
Half Width
I
F
=800mA
40
nm
∆λ
Viewing Half Angle
I
F
=800mA
±60
deg.
θ
1/2
Rise Time
I
F
=100mA
30
ns
½½
Fall Time
I
F
=100mA
20
ns
½½
‡Heat sink is required thermal resistance <8K/W
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com
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