2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
Rev. 01 — 12 November 2008
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
2PB709ARL
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
[1]
/DG: halogen-free
Type number
[1]
NPN complement
JEDEC
TO-236AB
TO-236AB
2PD601ARL
2PD601ASL
2PD601ARL/DG
2PD601ASL/DG
SOT23
SOT23
1.2 Features
I
I
I
I
General-purpose transistors
Two current gain selections
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group R
h
FE
group S
V
CE
=
−10
V;
I
C
=
−2
mA
210
290
-
-
340
460
Conditions
open base
Min
-
-
Typ
-
-
Max
−45
−100
Unit
V
mA
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym013
Simplified outline
3
Graphic symbol
3
1
3. Ordering information
Table 4.
Ordering information
Package
Name
2PB709ARL
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
[1]
/DG: halogen-free
Type number
[1]
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
4. Marking
Table 5.
Marking codes
Marking code
[1]
SN*
SL*
SS*
SZ*
Type number
2PB709ARL
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
2PB709AXL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
2 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
Min
-
-
-
-
-
-
-
-
−55
−65
Max
−45
−45
−6
−100
−200
−100
250
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
Conditions
[1]
Min
-
Typ
-
Max
500
Unit
K/W
thermal resistance from junction in free air
to ambient
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
h
FE
group R
h
FE
group S
V
CEsat
collector-emitter
saturation voltage
I
C
=
−100
mA;
I
B
=
−10
mA
[1]
Conditions
V
CB
=
−45
V; I
E
= 0 A
V
CB
=
−45
V; I
E
= 0 A;
T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−10
V; I
C
=
−2
mA
Min
-
-
-
Typ
-
-
-
Max
−10
−5
−10
Unit
nA
µA
nA
I
EBO
h
FE
210
290
-
-
-
-
340
460
−500
mV
2PB709AXL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
3 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
Table 8.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
f
T
Parameter
transition frequency
h
FE
group R
h
FE
group S
C
c
collector capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Conditions
V
CE
=
−10
V; I
C
=
−1
mA;
f = 100 MHz
Min
Typ
Max
Unit
70
80
V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 1 MHz
-
-
-
-
-
-
5
MHz
MHz
pF
[1]
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
3
1.1
0.9
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
Dimensions in mm
0.48
0.38
0.15
0.09
04-11-04
Fig 1.
Package outline SOT23 (TO-236AB)
2PB709AXL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
4 of 9
NXP Semiconductors
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
[2]
2PB709ARL
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
[1]
[2]
For further information and the availability of packing methods, see
Section 14.
/DG: halogen-free
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-215
10000
-235
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
1.7
2
solder paste
0.6
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
0.7
(3×)
Fig 2.
Reflow soldering footprint SOT23 (TO-236AB)
2PB709AXL_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 12 November 2008
5 of 9
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