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2PB709ARL

Description
45 V, 100 mA PNP general-purpose transistors
CategoryDiscrete semiconductor    The transistor   
File Size43KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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2PB709ARL Overview

45 V, 100 mA PNP general-purpose transistors

2PB709ARL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)210
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Base Number Matches1
2PB709ARL; 2PB709ASL
45 V, 100 mA PNP general-purpose transistors
Rev. 01 — 12 November 2008
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
2PB709ARL
2PB709ASL
2PB709ARL/DG
2PB709ASL/DG
[1]
/DG: halogen-free
Type number
[1]
NPN complement
JEDEC
TO-236AB
TO-236AB
2PD601ARL
2PD601ASL
2PD601ARL/DG
2PD601ASL/DG
SOT23
SOT23
1.2 Features
I
I
I
I
General-purpose transistors
Two current gain selections
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
h
FE
group R
h
FE
group S
V
CE
=
−10
V;
I
C
=
−2
mA
210
290
-
-
340
460
Conditions
open base
Min
-
-
Typ
-
-
Max
−45
−100
Unit
V
mA

2PB709ARL Related Products

2PB709ARL 2PB709ARL/DG 2PB709ASL/DG 2PB709ASL
Description 45 V, 100 mA PNP general-purpose transistors 45 V, 100 mA PNP general-purpose transistors 45 V, 100 mA PNP general-purpose transistors 45 V, 100 mA PNP general-purpose transistors
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23
package instruction PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code compli unknow unknow compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 210 210 290 290
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1
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