MCC94-20io1B
Thyristor Module
V
RRM
I
TAV
V
T
=
2x 2000 V
=
=
104 A
1.46 V
Phase leg
Part number
MCC94-20io1B
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
TO-240AA
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191125c
© 2019 IXYS all rights reserved
MCC94-20io1B
Thyristor
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
2100
V
2000
200
15
1.44
1.74
1.46
1.99
104
163
0.85
3.2
0.2
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
63
10
5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
= 250 A
t
P
= 200 µs; di
G
/dt = 0.45 A/µs;
I
G
= 0.45 A; V =
⅔
V
DRM
non-repet., I
T
= 104 A
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
185
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
10 µs
455
1.70
1.84
1.45
1.56
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 2000 V
V
R/D
= 2000 V
I
T
= 150 A
I
T
= 300 A
I
T
= 150 A
I
T
= 300 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.22 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
14.5 kA²s
14.0 kA²s
10.4 kA²s
10.1 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 700 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
150 A/µs
500 A/µs
1000 V/µs
1.5
1.6
150
200
0.25
10
200
150
2
V
V
mA
mA
V
mA
mA
mA
µs
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
turn-off time
V
R
= 100 V; I
T
= 150A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
20 V/µs t
p
= 200 µs
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191125c
© 2019 IXYS all rights reserved
MCC94-20io1B
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-240AA
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
200
125
100
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
81
2.5
2.5
13.0
16.0
9.7
16.0
3600
3000
4
4
Ordering
Standard
Ordering Number
MCC94-20io1B
Marking on Product
MCC94-20io1B
Delivery Mode
Box
Quantity
36
Code No.
463485
Similar Part
MCNA120P2200TA
Package
TO-240AA-1B
Voltage class
2200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125°C
V
0 max
R
0 max
0.85
2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191125c
© 2019 IXYS all rights reserved
MCC94-20io1B
Outlines TO-240AA
3
6
7
1
5
4
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191125c
© 2019 IXYS all rights reserved
MCC94-20io1B
Thyristor
300
250
200
1600
2000
50 Hz, 80% V
RRM
10
5
V
R
= 0 V
I
T
150
I
TSM
[A]
T
VJ
= 125°C
1200
T
VJ
= 125°C
50
T
VJ
= 25°C
0
0.5
800
1.0
1.5
2.0
0.01
0.1
1
T
VJ
= 45°C
I
2
t
10
4
T
VJ
= 45°C
T
VJ
= 125°C
[A]
100
[A s]
2
10
3
1
2
3
4 5 6 7 8 910
V
T
[V]
Fig. 1 Forward characteristics
t [s]
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
1000
200
t [ms]
Fig. 3 I
2
t versus time (1-10 s)
10
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
T
VJ
= 25°C
160
100
typ.
Limit
I
TAVM
120
V
G
1
2
1
3
5
6
t
gd
[µs]
[V]
[A]
80
10
40
dc =
1
0.5
0.4
0.33
0.17
0.08
4
4: P
GAV
= 0.5 W
0.1
I
GD
, T
VJ
= 140°C
5: P
GM
= 5 W
6: P
GM
= 10 W
1
10
100
1000
10000
1
10
0
100
1000
0
25
50
75
100 125 150
I
G
[mA]
Fig. 4 Gate voltage & gate current
I
G
[mA]
Fig. 5 Gate controlled delay time t
gd
T
case
[°C]
Fig. 6 Max. forward current at
case temperature
180
160
140
P
tot
120
100
80
60
40
dc =
1
0.5
0.4
0.33
0.17
0.08
0.24
R
thHA
0.1
0.2
0.4
0.6
0.8
1.0
0.20
0.16
Z
thJC
0.12
[W]
[K/W]
0.08
0.04
20
0
0
40
80
120 0
25
50
75 100 125 150
0.00
1
10
i R
thi
(K/W)
1
0.0073
2
0.0128
3
0.1329
4
0.067
100
1000
t
i
(s)
0.0001
0.0031
0.084
0.42
10000
I
T(AV)
[A]
T
amb
[°C]
t [ms]
Fig. 8 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191125c
© 2019 IXYS all rights reserved
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