
Insulated Gate Bipolar Transistor, 670A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | FLANGE MOUNT, R-XUFM-X5 |
| Reach Compliance Code | compliant |
| Other features | UL RECOGNIZED |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 670 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-X5 |
| Number of components | 1 |
| Number of terminals | 5 |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 2750 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 690 ns |
| Nominal on time (ton) | 160 ns |
| VCEsat-Max | 2.8 V |
| Base Number Matches | 1 |
| MID550-12A4 | MID150-12A4 | MID200-12A4 | MDI150-12A4 | MII150-12A4 | MII200-12A4 | MDI550-12A4 | |
|---|---|---|---|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 670A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Insulated Gate Bipolar Transistor, 670A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
| package instruction | FLANGE MOUNT, R-XUFM-X5 | FLANGE MOUNT, R-XUFM-X5 | FLANGE MOUNT, R-XUFM-X5 | FLANGE MOUNT, R-XUFM-X5 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X7 | FLANGE MOUNT, R-XUFM-X5 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| Other features | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Maximum collector current (IC) | 670 A | 180 A | 270 A | 180 A | 180 A | 270 A | 670 A |
| Collector-emitter maximum voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Gate-emitter maximum voltage | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| JESD-30 code | R-XUFM-X5 | R-XUFM-X5 | R-XUFM-X5 | R-XUFM-X5 | R-XUFM-X7 | R-XUFM-X7 | R-XUFM-X5 |
| Number of components | 1 | 1 | 1 | 1 | 2 | 2 | 1 |
| Number of terminals | 5 | 5 | 5 | 5 | 7 | 7 | 5 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 2750 W | 830 W | 1250 W | 830 W | 830 W | 1250 W | 2750 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | POWER CONTROL | POWER CONTROL | POWER CONTROL | POWER CONTROL | MOTOR CONTROL | MOTOR CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal off time (toff) | 690 ns | 570 ns | 700 ns | 570 ns | 570 ns | 700 ns | 690 ns |
| Nominal on time (ton) | 160 ns | 170 ns | 150 ns | 170 ns | 170 ns | 150 ns | 160 ns |
| VCEsat-Max | 2.8 V | 3 V | 3 V | 3 V | 3 V | 3 V | 2.8 V |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |
| Maker | - | - | Littelfuse | Littelfuse | Littelfuse | Littelfuse | Littelfuse |