SD1400-02 datasheet, PDF - EEWORLD Datasheet

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SD1400-02: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M118, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size77KB，3 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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SD1400-02 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M118, 6 PIN

SD1400-02 Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PDFM-F6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY
Maximum collector current (IC)	2 A
Collector-based maximum capacity	18 pF
Collector-emitter maximum voltage	28 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDFM-F6
Number of components	1
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

SD1400-02

RF & MICROWAVE

TRANSISTORS

800/900 MHz APPLICATIONS

Features

•

900 MHz

24 VOLTS

P

OUT

=

14 WATTS

G

P

= 9.7

dB MINIMUM

GOLD METALIZATION

20:1

VSWR CAPABILITY @ RATED CONDITIONS

COMMON BASE CONFIGURATION

•

DESCRIPTION:

The SD1400-02 is a 24V class C silicon NPN planar transistor

designed for base station applications. Internal impedance

matching provides improved power gain over the 806 - 900 MHz

frequency range. Gold metalization and emitter ballasting provide

superior long term reliability.

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25° C)

°

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

DISS

T

J

T

STG

Parameter

Collector- Base Voltage

Collector- Emitter Voltage

Emitter - Base Voltage

Device Current

Power Dissipation

Junction temperature

Storage Temperature

Value

55

28

4.0

2.0

57.5

200

-65 to + 150

Unit

V

A

W

°

C

°

C

Thermal Data

R

TH(J-C)

Thermal Resistance Junction-case

3.0

°

C/W

MSCXXXX.PDF 12-28-98

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