PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Rev. 01 — 6 November 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices
in leadless ultra small Surface-Mounted Device (SMD) plastic packages.
The devices are designed to protect two Hi-Speed data lines or high-frequency signal
lines from the damage caused by ESD and other transients.
PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail
ESD protection channels and one additional ESD protection diode each to ensure
signal line protection even if no supply voltage is available.
Table 1.
Product overview
Package
NXP
PRTR5V0U2F
PRTR5V0U2K
SOT886
SOT891
JEDEC
MO-252
-
leadless ultra small
leadless ultra small
Package configuration
Type number
1.2 Features
I
I
I
I
I
I
I
ESD protection of two Hi-Speed data lines or high-frequency signal lines
Ultra low input/output to ground capacitance: C
(I/O-GND)
= 1 pF
ESD protection up to 8 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low reverse current
Leadless ultra small SMD plastic packages
1.3 Applications
I
I
I
I
I
I
I
USB 2.0 interfaces
Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
C
(I/O-GND)
C
(I/O-I/O)
Zener diode
V
RWM
C
sup
[1]
[2]
[3]
Parameter
input/output to ground
capacitance
input/output to input/output
capacitance
reverse standoff voltage
supply pin to ground
capacitance
Conditions
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
[1]
Min
-
-
Typ
1.0
0.6
Max
1.5
-
Unit
pF
pF
[2]
[3]
-
-
-
16
5.5
-
V
pF
f = 1 MHz;
V
CC
= 0 V
[3]
Measured from pin 1, 3, 4 or 6 to ground.
Measured from pin 1 or 6 to pin 3 or 4.
Measured from pin 5 to ground.
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
input/output 1
ground
input/output 2
input/output 2
supply voltage
input/output 1
6
5
bottom view
4
3
006aab349
Symbol
I/O1
GND
I/O2
I/O2
V
CC
I/O1
Simplified outline
Graphic symbol
PRTR5V0U2F (SOT886)
1
2
3
1
4
2
5
6
PRTR5V0U2K (SOT891)
1
2
3
4
5
6
I/O1
GND
I/O2
I/O2
V
CC
I/O1
input/output 1
ground
input/output 2
input/output 2
supply voltage
input/output 1
6
5
4
bottom view
3
006aab349
1
2
3
1
4
2
5
6
PRTR5V0U2F_PRTR5V0U2K_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2008
2 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
3. Ordering information
Table 4.
Ordering information
Package
Name
PRTR5V0U2F
PRTR5V0U2K
XSON6
XSON6
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 1.45 0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 1 0.5 mm
Version
SOT886
SOT891
Type number
4. Marking
Table 5.
Marking codes
Marking code
PF
PK
Type number
PRTR5V0U2F
PRTR5V0U2K
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
amb
T
stg
ambient temperature
storage temperature
−40
−55
+85
+125
°C
°C
Parameter
Conditions
Min
Max
Unit
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[1][2]
Min
-
-
Max
8
10
Unit
kV
kV
Per channel
[2]
PRTR5V0U2F_PRTR5V0U2K_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2008
3 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
Table 8.
Standard
Per channel
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U2F_PRTR5V0U2K_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2008
4 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per channel
I
R
C
(I/O-GND)
C
(I/O-I/O)
V
F
Zener diode
V
RWM
V
BR
C
sup
[1]
[2]
[3]
[4]
Parameter
reverse current
input/output to ground
capacitance
input/output to input/output
capacitance
forward voltage
reverse standoff voltage
breakdown voltage
supply pin to ground
capacitance
Conditions
V
R
= 5 V
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
I
F
= 1 mA
[1]
[1]
Min
-
-
-
-
-
6
-
Typ
<1
1.0
0.6
0.7
-
-
16
Max
100
1.5
-
-
5.5
9
-
Unit
nA
pF
pF
V
V
V
pF
[2]
[3]
[4]
[4]
f = 1 MHz;
V
CC
= 0 V
[4]
Measured from pin 1, 3, 4 or 6 to ground.
Measured from pin 1 or 6 to pin 3 or 4.
Measured from pin 1, 3, 4 or 6 to pin 5.
Measured from pin 5 to ground.
2.0
C
(I/O-GND)
(pF)
1.6
006aaa483
1.0
C
(I/O-I/O)
(pF)
0.8
006aaa484
1.2
0.6
0.8
0.4
0.4
0.2
0
0
1
2
3
5
V
(I/O-GND)
(V)
4
0
0
1
2
3
4
5
V
(I/O-I/O)
(V)
f = 1 MHz; T
amb
= 25
°C
f = 1 MHz; T
amb
= 25
°C
Fig 2.
Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3.
Input/output to ground capacitance as a
function of input/output to input/output
voltage; typical values
PRTR5V0U2F_PRTR5V0U2K_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2008
5 of 12
京公网安备 11010802033920号
EEWORLD
