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NAND01GR4A3BN6F

Description
64MX16 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

NAND01GR4A3BN6F Overview

64MX16 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48

NAND01GR4A3BN6F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP
package instruction12 X 20 MM, TSOP-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time15000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density1073741824 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width12 mm
Base Number Matches1
NAND FLASH
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY
s
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
s
Figure 1. Packages
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
TSOP48
12 x 20 mm
s
SUPPLY VOLTAGE
– 1.8V device: V
CC
= 1.65 to 1.95V
– 3.0V device: V
CC
= 2.7 to 3.6V
FBGA
s
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
s
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
s
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
s
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
s
s
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
s
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
s
s
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
s
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
s
DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
s
s
s
August 2003
For further information please contact the STMicroelectronics distributor nearest to you.
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