SI4925DYF011 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> SI4925DYF011

SI4925DYF011: DescriptionPower Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size206KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

Download Datasheet Parametric View All

SI4925DYF011 Overview

Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4925DYF011 Parametric

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.032 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

January 2001

Si4925DY

Dual P-Channel, Logic Level, PowerTrench

MOSFET

General Description

These P-Channel Logic Level MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

Features

-6 A, -30 V. R

DS(ON)

= 0.032

Ω

@ V

= -10 V,

DS(ON)

= 0.045

Ω

@ V

= -4.5 V.

Low gate charge (14.5nC typical).

High performance trench technology for extremely low

DS(ON)

High power and current handling capability.

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

SO-8

Absolute Maximum Ratings

Symbol

DSS

GSS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

= 25

C unless otherwise noted

Si4925DY

-30

±20

(Note 1a)

Units

-6

-20

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

-55 to 150

°C

STG

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

Si4925DY Rev.A

Recommended Resources

simple timer

transistor current amplifier

One of the boiler water level alarm circuits

Closed-loop control circuit diagram of single-ended forward converter

"Big Brother" 9900 automatic charger and discharger

Range hood automatic control circuit

An error occurred when using the dialog box under WINCE6.0.: I got an error when using DialogBox() in WINCE6.0. In its message function, only one statement was executed and then it went to other messages. What is the reason? Thank you!...; ewew Embedded System

Regarding the SD card issue, please help, thank you: I installed a program on my PDA via an SD card, and the directory in the program file is \\Storage Card\. But after the installation and restart, the program prompts that it cannot find the SD card. I...; pkvpk Embedded System

How to Hold All Linear Power Supply Indicators (Part 4): AC Characteristics Although we are discussing DC power supplies, the output of these supplies is not pure DC. There will be some AC component in the output. For some applications, a large AC component...; Jack_ma Test/Measurement

ESP-S3-12K (IV) ---- Here comes the ESP-box effect: Well, the effect is here. For the novice of screen clicking, it is not so smooth. The main effect is as follows Failure 1: The height and width are wrongFailure 2: Colors are invertedFailure 3: The X-...; RCSN Domestic Chip Exchange

【Discussion】The impact of op amp technology on performance: While using op amps, I found that there are many different processes, such as CMOS op amps, JFET input op amps, and so on. I hope someone can share: What are the processes used in op amps, and what im...; zhengenhao Analog electronics

Using single chip microcomputer to make multi-frequency display signal source program: Using a single chip to make a multi-frequency display signal source program...; yjtyjt 51mcu

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components