HN27C4096HG/HCC Series
262,144-word
×
16-bit CMOS UV Erasable and Programmable
ROM
Description
HN27C4096HG/HCC is a 4-Mbit ultraviolet erasable and electrically programmable ROM, featuring high
speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the
HN27C4096HG/HCC makes high speed sub 100 ns access time possible. Therefore, it is suitable for fast 16-
bit and 32-bit microcomputer systems using high speed microcomputer such as the 80286/80386 and
68020/68030. The HN27C4096HG/HCC offers high speed programming using page programming mode.
This device has the package variation of cerdip 40-pin and JLCC 44-pin.
Features
•
High speed
Access time: 85 ns (max)
•
Low power dissipation
Active mode: 35 mW/MHz (typ)
•
Fast high reliability page programming and fast high-reliability programming
Programming voltage: +12.5 V D.C.
Programming time: 3.5 sec. (min) (Theoretical in page programming)
•
Inputs and outputs TTL compatible during both read and program modes.
•
Pin arrangement: 40-pin JEDEC standard, 44-pin JLCC JEDEC standard
•
Device indentifier mode: Manufacturer code and device code
Ordering Information
Type No.
HN27C4096HG-85
HN27C4906HCC-85
Access Time
85 ns
85 ns
Package
600-mil 40-pin Cerdip (DG-40A)
44-pin J-bend leaded chip carrier (CC-44)
HN27C4096HG/HCC Series
Mode Selection
Pin
CC
Mode
Read
Output disable
Standby
Page prog.
Page program set
Page data latch
Page program
Page program verify
Page program reset
Word prog.
Program
Program verify
Optional verify
Program inhibit
Identifier
Notes: 1. X: Don’t care.
2. V
H
: 12.0 V
±
0.5 V
G
CE
(3)
(2)
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
OE
(22)
(20)
V
IL
V
IH
X
V
H
*
2
V
H
*
2
V
IH
V
IL
V
IH
V
IH
V
IL
V
IL
V
IH
V
IL
A9
(35)
(31)
X
X
X
X
X
X
X
X
X
X
X
X
V
H
*
2
V
PP
(2)
(1)
V
SS
– V
CC
V
SS
– V
CC
V
SS
– V
CC
V
PP
V
PP
V
PP
V
PP
V
CC
V
PP
V
PP
V
PP
V
PP
V
SS
– V
CC
V
CC
(44)
(40)
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
I/O
(4 – 11, 14 – 21)
(3 – 10, 12 – 19)
Dout
High-Z
High-Z
High-Z
Din
High-Z
Dout
High-Z
Din
Dout
Dout
High-Z
Code
Absolute Maximum Ratings
Parameter
All input and output voltages
*1
Voltage on pin A9 and
OE
V
PP
voltage
*1
V
CC
voltage
*1
Operating temperature range
Storage temperature range
*3
Storage temperature under bias
Symbol
Vin, Vout
V
ID
V
PP
V
CC
Topr
Tstg
Tbias
Value
–0.6
*2
to +7.0
–0.6
*2
to +13.0
–0.6 to +13.5
–0.6 to +7.0
0 to +70
–65 to +125
–20 to +80
Unit
V
V
V
V
°C
°C
°C
Notes: 1. Relative to V
SS
.
2. Vin, Vout, V
ID
min = –2.0 V for pulse width
≤
20 ns
3. Storage temperature range of device before programming.
4
HN27C4096HG/HCC Series
Capacitance
(Ta = 25°C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
Cin
Cout
Min
—
—
Typ
—
—
Max
12
20
Unit
pF
pF
Test Conditions
Vin = 0 V
Vout = 0 V
Read Operation
DC Characteristics
(V
CC
= 5 V
±
10%, V
PP
= V
SS
to V
CC
, Ta = 0 to +70°C)
Parameter
Input leakage current
Output leakage current
V
PP
current
Standby V
CC
current
Operating V
CC
current
Symbol
I
LI
I
LO
I
PP1
I
SB
I
CC1
I
CC2
Input voltage
V
IL
V
IH
Output voltage
V
OL
V
OH
Min
—
—
—
—
—
—
–0.3
*1
2.2
—
2.4
Typ
—
—
1
—
—
—
—
—
—
—
Max
2
2
20
30
30
120
0.8
V
CC
+ 1
*2
0.45
—
Unit
µA
µA
µA
mA
mA
mA
V
V
V
V
I
OL
= 2.1 mA
I
OH
= –400
µA
Test Conditions
Vin = 5.5 V
Vout = 5.5 V/0.45 V
V
PP
= 5.5 V
CE
= V
IH
Iout = 0 mA, f = 1 MHz
Iout = 0 mA, f = 11.8
MHz
Notes: 1. V
IL
min = –1.0 V for pulse width
≤
50 ns
V
IL
min = –2.0 V for pulse width
≤
20 ns
2. V
IH
max = V
CC
+1.5 V for pulse width
≤
20 ns
If V
IH
is over the specified maximum value, read operation cannot be guaranteed.
5
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