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STD2NA50-1

Description
2.2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, TO-251, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size96KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STD2NA50-1 Overview

2.2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, TO-251, IPAK-3

STD2NA50-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)25 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)2.2 A
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)8.8 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STD2NA50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STD2NA50
V
DSS
500 V
R
DS(on)
<4
I
D
2.2 A
s
s
s
s
s
s
s
s
s
TYPICAL R
DS(on)
= 3.25
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
2
1
1
3
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
s
MEDIUM CURRENT, HIGH SPEED
SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
500
500
±
30
2.2
1.4
8.8
45
0.36
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
March 1996
1/6

STD2NA50-1 Related Products

STD2NA50-1 STD2NA50T4
Description 2.2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, TO-251, IPAK-3 2.2A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, D2PAK-3
Is it Rohs certified? incompatible conform to
Parts packaging code TO-251 TO-252
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 25 mJ 25 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 2.2 A 2.2 A
Maximum drain current (ID) 2.2 A 2.2 A
Maximum drain-source on-resistance 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251 TO-252
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 45 W 45 W
Maximum pulsed drain current (IDM) 8.8 A 8.8 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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