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SI1501DL-E3

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size84KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SI1501DL-E3 Overview

Transistor

SI1501DL-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
Maximum drain current (Abs) (ID)0.18 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
Si1501DL
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
Channel
N-Channel
V
DS
(V)
20
r
DS(on)
(W)
2.0 @ V
GS
= 4.5 V
2.5 @ V
GS
= 2.5 V
3.8 @ V
GS
=
−4.5
V
5.0 @ V
GS
=
−2.5
V
I
D
(mA)
250
150
−180
−100
P-Channel
P Channel
−20
20
SC-70 (6-Leads)
S
1
G
1
D
2
1
2
3
Top View
6
5
4
Marking Code
YY
Lot Traceability
and Date Code
Part # Code
D
1
G
2
S
2
RE
XX
SOT-363
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
N-Channel
20
"8
250
200
500
0.20
0.13
P-Channel
−20
"8
−180
−140
−500
Unit
V
mA
W
_C
−55
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Symbol
R
thJA
Limit
625 (Total)
Unit
_C/W
Document Number: 71303
S-03840—Rev. B, 21-May-01
www.vishay.com
S
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