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BZD27-C160,135

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size91KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BZD27-C160,135 Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZD27-C160,135 Parametric

Parameter NameAttribute value
package instructionO-LELF-R2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage153 V
Shell connectionISOLATED
Maximum clamping voltage224 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Certification statusNot Qualified
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
1996 Jun 10
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