IR-M011 datasheet, PDF - EEWORLD Datasheet

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IR-M011: DescriptionRF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerSHARP; Websitehttp://sharp-world.com/products/device/

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IR-M011 Overview

RF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8

IR-M011 Parametric

Parameter Name	Attribute value
package instruction	SOP-8
Reach Compliance Code	unknown
FET technology	METAL SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-PDSO-G8
Number of terminals	8
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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IR-M011 Related Products

	IR-M011	IR-H001J	IR-M012N4	IR-M010	IR-H002J	IR-H006J	IR-H003J	IR-H005J
Description	RF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	SPDT, 1000MHz Min, 2000MHz Max, 1dB Insertion Loss-Max, SOP, 8 PIN	RF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, L Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4
package instruction	SOP-8	CERAMIC PACKAGE-4	SOP, 8 PIN	SOP-8	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
FET technology	METAL SEMICONDUCTOR	HIGH ELECTRON MOBILITY	-	METAL SEMICONDUCTOR	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
highest frequency band	L BAND	X BAND	-	L BAND	X BAND	L BAND	X BAND	X BAND
Operating mode	DEPLETION MODE	DEPLETION MODE	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	SILICON	-	GALLIUM ARSENIDE	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	-	-
Minimum drain-source breakdown voltage	-	2.9 V	-	-	2.9 V	2.9 V	2.9 V	3.5 V
Maximum drain current (ID)	-	0.08 A	-	-	0.08 A	0.08 A	0.08 A	0.08 A
Polarity/channel type	-	N-CHANNEL	-	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	-	10.5 dB	-	-	10.5 dB	16 dB	10 dB	9 dB

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