IR-H001J datasheet, PDF - EEWORLD Datasheet

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IR-H001J: DescriptionRF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerSHARP; Websitehttp://sharp-world.com/products/device/

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IR-H001J Overview

RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4

IR-H001J Parametric

Parameter Name	Attribute value
package instruction	CERAMIC PACKAGE-4
Reach Compliance Code	unknown
Minimum drain-source breakdown voltage	2.9 V
Maximum drain current (ID)	0.08 A
FET technology	HIGH ELECTRON MOBILITY
highest frequency band	X BAND
Operating mode	DEPLETION MODE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	10.5 dB
Certification status	Not Qualified
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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IR-H001J Related Products

	IR-H001J	IR-M012N4	IR-M011	IR-M010	IR-H002J	IR-H006J	IR-H003J	IR-H005J
Description	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	SPDT, 1000MHz Min, 2000MHz Max, 1dB Insertion Loss-Max, SOP, 8 PIN	RF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8	RF Small Signal Field-Effect Transistor, L Band, Gallium Arsenide, Metal Semiconductor FET, SOP-8	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, L Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4	RF Small Signal Field-Effect Transistor, X Band, Silicon, N-Channel, High Electron Mobility FET, CERAMIC PACKAGE-4
package instruction	CERAMIC PACKAGE-4	SOP, 8 PIN	SOP-8	SOP-8	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4	CERAMIC PACKAGE-4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Minimum drain-source breakdown voltage	2.9 V	-	-	-	2.9 V	2.9 V	2.9 V	3.5 V
Maximum drain current (ID)	0.08 A	-	-	-	0.08 A	0.08 A	0.08 A	0.08 A
FET technology	HIGH ELECTRON MOBILITY	-	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY	HIGH ELECTRON MOBILITY
highest frequency band	X BAND	-	L BAND	L BAND	X BAND	L BAND	X BAND	X BAND
Operating mode	DEPLETION MODE	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Polarity/channel type	N-CHANNEL	-	-	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	10.5 dB	-	-	-	10.5 dB	16 dB	10 dB	9 dB
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	GALLIUM ARSENIDE	GALLIUM ARSENIDE	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	-	-

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