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MCH6308

Description
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,3.5A I(D),SOT-363VAR
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MCH6308 Overview

TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,3.5A I(D),SOT-363VAR

MCH6308 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)3.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Base Number Matches1
Ordering number : ENN7620
MCH6308
P-Channel Silicon MOSFET
MCH6308
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm
2193A
[MCH6308]
0.25
0.3
0.15
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
4
2.1
1.6
5
6
0.25
3 2
0.65
2.0
0.07
1
6
5
4
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
0.85
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
Unit
--12
±8
--3.5
--14
1.5
150
--55 to +150
V
V
A
A
W
°C
°C
1
2
3
(Top view)
Ratings
Mounted on a ceramic board (1200mm
2
!0.8mm)
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Conditions
ID=-
-1mA, VGS=0
VDS=--12V, VGS=0
VGS=±6.4V, VDS=0
VDS=--6V, ID=--1mA
VDS=--6V, ID=-
-1.7A
ID=-
-1.7A, VGS=--4.5V
ID=-
-0.8A, VGS=--2.5V
ID=-
-0.4A, VGS=--1.8V
--0.3
3.3
4.7
75
110
150
98
155
225
Ratings
min
--12
--10
±10
--1.0
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
mΩ
Marking : JH
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71003 TS IM TA-100053 No.7620-1/4
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