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MPSA55-D27Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size2MB,13 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

MPSA55-D27Z Overview

Transistor

MPSA55-D27Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)50 MHz
Base Number Matches1
MPSA55 / MMBTA55 / PZTA55
MPSA55
MMBTA55
C
PZTA55
C
E
C
B
TO-92
E
SOT-23
Mark: 2H
B
SOT-223
B
C
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73. See
MPSA56 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
4.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA55
625
5.0
83.3
200
Max
*MMBTA55
350
2.8
357
**PZTA55
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
ã
1997 Fairchild Semiconductor Corporation
MPSA55/MMBTA55/PZTA55, Rev A

MPSA55-D27Z Related Products

MPSA55-D27Z MPSA55-L98Z MPSA55-D26Z
Description Transistor Transistor Transistor
Is it Rohs certified? conform to incompatible conform to
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A
Configuration Single Single Single
Minimum DC current gain (hFE) 50 50 50
JESD-609 code e3 e0 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Nominal transition frequency (fT) 50 MHz 50 MHz 50 MHz
Base Number Matches 1 1 -

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