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AT-41511-TR1

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size412KB,10 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric Compare View All

AT-41511-TR1 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN

AT-41511-TR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHewlett Packard Co.
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE, HIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandS BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz

AT-41511-TR1 Related Products

AT-41511-TR1 AT-41511-BLK AT-41533-TR1 AT-41533-BLK
Description RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, S Band, Silicon, NPN
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30 30
highest frequency band S BAND S BAND S BAND S BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 4 4 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8000 MHz 8000 MHz 8000 MHz 8000 MHz
Maker Hewlett Packard Co. Hewlett Packard Co. - Hewlett Packard Co.
Base Number Matches - 1 1 1

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