DH71010-60T10 datasheet, PDF - EEWORLD Datasheet

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DH71010-60T10: DescriptionVariable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size51KB，2 Pages; ManufacturerTemex Ceramics

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DH71010-60T10 Overview

Variable Capacitance Diode, High Frequency to S Band, 1pF C(T), 30V, Silicon, Abrupt, PLASTIC PACKAGE-2

DH71010-60T10 Parametric

Parameter Name	Attribute value
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Minimum breakdown voltage	30 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Nominal diode capacitance	1 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	HIGH FREQUENCY TO S BAND
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Varactor Diode Classification	ABRUPT
Base Number Matches	1

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TUNING VARACTOR

Plastic package Surface Mount Silicon abrupt tuning varactor

SOT23 SURFACE MOUNT SILICON ABRUPT

TUNING VARACTOR

Description

This series of silicon tuning varactors have an epitaxial mesa design with a high temperature

passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family

is designed for a low cost medium to high volume market that may be supplied in tape and reel

for automated pick and place assembly on surface mount circuit boards.

Applications

The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.

They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.

Typical applications include low noise narrow and moderate frequency bandwidth applications

(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned

ﬁlters, phase shifters, delay line, etc.

NOTE:

Variation of the junction capacitance versus reverse voltage follows this equation:

C

j

(V

r

)

=

C

j

(0 V)

1 + V

r

φ

[

]

γ

V

r

:

φ

:

γ

:

Reverse voltage

Built-in potential .7V for Si

.5 for abrupt tuning varactor

12-32

Vol. 1

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.com

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