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BAT54CT

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAT54CT Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

SMD Type
Switching Diode
BAT54T;BAT54AT
BAT54CT;BAT54ST
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Diodes
Unit: mm
+0.01
0.1
-0.01
Ultra-small surface mount package
Low forward voltage drop
Fast switching
PN junction guard ring for transient and ESD protection
Available in lead free version
2
1
+0.15
1.6
-0.15
0.55
Features
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
N o n -R e p e titive P e a k re ve rs e vo lta g e
D C B lo c k in g V o lta g e
A ve ra g e R e c tifie d O u tp u t C u rre n t
P o w e r D is s ip a tio n
J u n c tio n T e m p e ra tu re
S to ra g e T e m p e ra tu re ra n g e
S ym b o l
V
RM
V
R
I
o
P
d
T
J
T
STG
200
150
150
-6 5 to + 1 5 0
mA
mW
L im its
30
U n it
V
Electrical Characteristics Ta = 25
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V
(BR)
I
R
Conditions
I
R
= 100
V
R
=25V
I
F
= 0.1 mA
I
F
= 1 mA
Forward voltage
V
F
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Total capacitance
Reverse recovery time
C
T
t
rr
V
R
= 1V,f=1MHz
I
F
= 10mA, I
R
= 10mA
1mA,R
L
=100
A
Min
30
2
240
320
400
500
1000
10
5
pF
ns
mV
Max
Unit
V
A
Marking
Type
Marking
BAT54T
L1
BAT54AT
L2
BAT54CT
L3
BAT54ST
L4
+0.05
0.8
-0.05
www.kexin.com.cn
1

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