SMD Type
NPN High-Voltage Transistors
BST39; BST40
Transistors
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
(open emitte)
collector-emitter voltage
(open-base )
BST39
BST40
BST39
BST40
V
EBO
I
C
I
CM
I
BM
25
*
P
tot
T
stg
T
j
T
amb
R
th j-a
R
th j-s
V
CEO
Symbol
V
CBO
Rating
400
300
350
250
5
100
200
100
1.3
-65 to150
150
-65 to150
96
16
K/W
K/W
Unit
V
V
V
V
V
mA
mA
mA
W
emitter-base voltage (open collector)
collector current (DC)
peak collector current
peak base current
total power dissipation T
amb
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient *
thermal resistance from junction to soldering point
* Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for
collector 6 cm
2
.
www.kexin.com.cn
1
SMD Type
BST39; BST40
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
Transistors
unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
Testconditons
I
E
= 0; V
CB
= 300 V
I
C
= 0; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
I
C
= 50 mA; I
B
= 4 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
70
Min
Typ
Max
20
100
40
500
2
mV
pF
MHz
Unit
nA
nA
Marking
Type Number
Marking
BST39
AT1
BST40
AT2
2
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Microcontroller MCU
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