SMD Type
Dual Schottky Barrier Diodes
MBD110DWT1
MBD330DWT1;MBD770DWT1
SO
T
-363
+0.1
1.3
-0.1
0.65
Diodes
Unit: mm
Very Low Capacitance
Low Reverse Leakage
0.36
+0.1
0.3
-0.1
+0.1
2.1
-0.1
+0.05
0.1
-0.02
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
M B D110DW T1
R e ve rs e V o lta g e
M B D330DW T1
M B D770DW T1
F o rw a rd P o w e r D is s ip a tio n
J u n c tio n T e m p e ra tu re
S to ra g e T e m p e ra tu re R a n g e
T
A
= 25
P
F
T
J
T
stg
V
R
S ym b o l
V a lu e
7
30
70
120
-5 5 to + 1 2 5
-5 5 to + 1 5 0
mA
V dc
U n it
+0.05
0.95
-0.05
0.1max
+0.1
1.25
-0.1
+0.15
2.3
-0.15
Extremely Low Minority Carrier Lifetime
0.525
Features
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1
SMD Type
MBD110DWT1
MBD330DWT1;MBD770DWT1
Electrical Characteristics Ta = 25
Parameter
MBD110DWT1
Reverse Breakdown Voltage
MBD330DWT1
MBD770DWT1
Diode Capacitance
Total Capacitance
MBD110DWT1
MBD330DWT1
MBD770DWT1
MBD110DWT1
Reverse Leakage
MBD330DWT1
MBD770DWT1
Noise Figure
MBD110DWT1
MBD110DWT1
MBD330DWT1
Forward Voltage
MBD770DWT1
V
F
NF
I
R
C
T
C
T
V
R
= 0, f = 1.0 MHz
V
R
= 15 Volts, f = 1.0 MHz
V
R
= 20 Volts, f = 1.0 MHz
V
R
= 3.0 V
V
R
= 25 V
V
R
= 35 V
f = 1.0 GHz
I
F
= 10 mA
I
F
= 1.0 mAdc
I
F
= 10 mA
I
F
= 1.0 mAdc
I
F
= 10 mA
V
BR(R)
I
R
= 10 A
Symbol
Conditions
Min
7.0
30
70
0.88
0.9
0.5
0.02
13
9
6
0.5
0.38
0.52
0.47
0.7
Typ
10
Diodes
Max
Unit
Volts
1.0
1.5
1.0
0.25
200
200
pF
pF
A
nAdc
nAdc
dB
0.6
0.45
0.6
0.5
1.0
Vdc
Marking
Type
Marking
MBD110DWT1 MMBD330DWT1 MBD770DWT1
M4
T4
H5
2
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