BAS70 datasheet, PDF - EEWORLD Datasheet

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BAS70: Description0.2 A, 70 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size33KB，1 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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BAS70 Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BAS70 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	Plastic, SOT-23, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	70 V
Maximum average forward current	0.2000 A

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SMD Type

Schottky barrier (double) diodes

BAS70 series

Diodes

SOT-23

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Unit: mm

+0.1

2.4

-0.1

Low forward current

High breakdown voltage

Guard ring protected

Small plastic SMD package

Low diode capacitance.

1

2

+0.1

1.3

-0.1

Features

0.95

+0.1

-0.1

+0.1

1.9

-0.1

0.55

0.4

3

+0.05

0.1

-0.01

0.97

+0.1

0.38

-0.1

+0.1

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Junction temperature

Operating ambient temperature

thermal resistance from junction to ambient

Symbol

V

R

I

F

I

FRM

I

FSM

T

stg

T

j

T

amb

R

th j-a

-65

tp

1 s; ä

tp < 10 ms

-65

0.5

Conditions

Min

Max

70

100

+150

150

+150

500

K/W

Unit

V

mA

Electrical C haracteristics T a = 25

P aram eter

Forward voltage

S ym bol

V

F

Conditions

I

F

= 1 m A

I

F

= 10 m A

I

F

= 15 m A

Reverse voltage leakage current

Charge carrier life tim e (K rakauer m ethod)

Diode capacitance

Note

1. P ulse test: t

p

= 300

s; ä = 0.02

C

d

I

R

V

R

= 50 V ; note 1

V

R

= 70 V ; note 1

I

F

= 5 m A

f = 1 M Hz; V

R

= 0;

M ax

410

750

1

100

10

100

2

Unit

mV

V

nA

A

ps

pF

Marking

Type

Marking

BAS70

73*

BAS70-04

74*

BAS70-05

75*

BAS70-06

76*

BAS70-07

77p

0-0.1

www.kexin.com.cn

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BAS70 Related Products

	BAS70	BAS70-04	BAS70-05	BAS70-06
Description	0.2 A, 70 V, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals	3	3	3	3
Number of components	1	2	2	2
Processing package description	Plastic, SOT-23, 3 PIN	LEAD FREE, MINIATURE PACKAGE-3	PLASTIC PACKAGE-3	ROHS COMPLIANT PACKAGE-3
state	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	RECTANGULAR	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair	pair
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	single	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	silicon	SILICON	silicon	silicon
Diode type	Signal diode	SIGNAL DIODE	Signal diode	Signal diode
Maximum repetitive peak reverse voltage	70 V	70 V	70 V	70 V
Maximum average forward current	0.2000 A	0.0700 A	0.0700 A	0.0700 A
terminal coating	tin lead	-	MATTE Tin	MATTE Tin
Maximum power consumption limit	0.2000 W	-	0.2500 W	0.2500 W

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