SMD Type
Schottky barrier (double) diodes
BAS70 series
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Symbol
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
R
th j-a
-65
tp
1 s; ä
tp < 10 ms
-65
0.5
Conditions
Min
Max
70
70
70
100
+150
150
+150
500
K/W
Unit
V
mA
mA
mA
Electrical C haracteristics T a = 25
P aram eter
Forward voltage
S ym bol
V
F
Conditions
I
F
= 1 m A
I
F
= 10 m A
I
F
= 15 m A
Reverse voltage leakage current
Charge carrier life tim e (K rakauer m ethod)
Diode capacitance
Note
1. P ulse test: t
p
= 300
s; ä = 0.02
C
d
I
R
V
R
= 50 V ; note 1
V
R
= 70 V ; note 1
I
F
= 5 m A
f = 1 M Hz; V
R
= 0;
M ax
410
750
1
100
10
100
2
Unit
mV
mV
V
nA
A
ps
pF
Marking
Type
Marking
BAS70
73*
BAS70-04
74*
BAS70-05
75*
BAS70-06
76*
BAS70-07
77p
0-0.1
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