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MMBD1701A

Description
0.05 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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MMBD1701A Overview

0.05 A, 30 V, SILICON, SIGNAL DIODE

MMBD1701A Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionSOT-23, 3 PIN
Lead-freeYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.3500 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time1.00E-3 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.0500 A
SMD Type
High Conductance Low Leakage Diode
MMBD1701/A,MMBD1703/A
MMBD1704/A,MMBD1705/A
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Working lnverse voltage
Average rectified current
DC forward current
recurrent peak forward current
Peak forward surge current pulse width = 1.0 second
Storage temperature range
Operating junction temperature
Total device dissipation
Derate above 25
Thermal resistance, Junction to ambient
MMBD1701/A /1703/A-1705/A*
* Device mounted on glass epoxy 1.6"
1.6"
0.06", mounting pad for collector lead min. 0.93in2.
R
JA
Symbol
W
IV
I
O
I
F
i
f
i
f
T
stg
T
J
P
D
Value
20
50
150
150
250
-55 to + 150
150
350
2.8
357
Unit
V
mA
mA
mA
mA
mW
mW/
/W
0-0.1
www.kexin.com.cn
1

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