SMD Type
Transistors
IC
N-channel Enhancement Mode MOSFET
2SK3652
TO
-
263
+ .1
1 .2 7
-00.1
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low on-resistance, low Qg
High avalanche resistance
For high-speed switching
+ .2
8 .7
-00.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+ .2
5 .2 8
-00.2
2.54
+0.1
5.08
-0.1
+ .2
2 .5 4
-00.2
+ .2
1 5 .2 5
-00.2
+0.2
2.54
-0.2
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
Power dissipation Ta = 25
Power dissipation
Channel temperature
Storage temperature
* L = 1 mH, I
L
= 50 A, V
DD
= 100 V, 1 pulse, T
a
= 25
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
DP
E
AS
P
D
Rating
230
30
50
200
2 200
3
100
150
-55 to +150
Unit
V
V
A
A
mJ
W
5 .6 0
1 Gate
2 Drain
3 Source
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1
SMD Type
2SK3652
Electrical Characteristics Ta = 25
Parameter
Gate-drain surrender voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode foward voltage
Reverse recovery time
Reverse recovery charge
Total gate charge
Gate-source charge
Gate-drain charge
Channel-case heat resistance
Channel-atmosphere heat resistance
Symbol
V
DSS
V
th
I
DSS
I
GSS
Testconditons
I
D
= 1 mA, V
GS
= 0
V
DS
= 25 V, I
D
= 10 mA
V
DS
= 184 V, V
GS
= 0
V
GS
=
30 V, V
DS
= 0
Min
230
2
Transistors
IC
Typ
Max
Unit
V
4
100
1
29
40
V
ìA
ìA
mÙ
S
pF
pF
pF
ns
ns
ns
ns
R
DS(on)
V
GS
= 10 V, I
D
= 25 A
Y
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DSF
t
rr
Q
rr
Q
g
Q
gs
Q
gd
R
th(ch-c)
R
th(ch-a)
V
DD
= 100 V, I
D
= 25 A,V
GS
= 10 V
I
DR
= 50 A, V
GS
= 0
L = 230 ìH, V
DD
= 100 V
I
DR
= 25 A, d
i
/d
t
= 100 A/ìs
V
DD
= 100 V, I
D
= 25 A,R
L
= 4 Ù,
V
GS
= 10 V
V
DS
= 25 V, V
GS
= 0, f = 1 MHz
V
DS
= 25 V, I
D
= 25 A
17
35
5 950
850
80
65
140
470
145
-1.5
235
1 180
105
40
14
1.25
41.6
V
ns
nC
nC
nC
nC
/W
/W
2
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