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KDW2521C

Description
Complementary PowerTrench MOSFET
File Size67KB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

KDW2521C Overview

Complementary PowerTrench MOSFET

SMD Type
Complementary PowerTrench MOSFET
KDW2521C
IC
IC
Features
N-Channel
5.5 A, 20 V
R
DS(ON)
= 21m
R
DS(ON)
= 35m
P-Channel
-3.8 A, 20 V R
DS(ON)
= 43 m
R
DS(ON)
= 70 m
@ VGS =- 4.5 V
@ V
GS
=-2.5V
@ V
GS
= 4.5 V
@ V
GS
=2.5V
TSSOP-8
Unit: mm
High performance trench technology for extremely low R
DS(ON)
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
(Note 1b)
T
J
, T
STG
R
JA
Symbol
V
DSS
V
GS
I
D
N-Channel
20
12
5.5
30
P- Channel
-20
12
-3.8
-30
1
0.6
-55 to 150
125
208
Unit
V
V
A
A
W
P
D
/W
/W
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