SMD Type
TrenchMOS
TM
standard level FET
KUK7606-75B
TO
-
263
+ .1
1 .2 7
-00.1
Transistors
IC
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Very low on-state resistance
Q101 compliant
+ .2
8 .7
-00.2
175
rated
Standard level compatible.
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+ .2
5 .2 8
-00.2
2.54
5.08
+0.1
-0.1
+ .2
2 .5 4
-00.2
+ .2
1 5 .2 5
-00.2
+0.2
2.54
-0.2
0.4
+0.2
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Drain-gate voltage R
GS
= 20 KÙ
Gate-source voltage
Drain current (DC) T
mb
= 25 ,V
GS
= 10 V
Drain current (DC) T
mb
= 100 ,V
GS
= 10 V
Drain current (pulse peak value) *1
Total power dissipation T
mb
= 25
Storage & operating temperature
reverse drain current (DC) T
mb
= 25
pulsed reverse drain current *1
non-repetitive avalanche energy *2
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
* 1 Tmb = 25 ; pulsed; tp
10 ìs;
75 V; V
GS
= 10 V; R
GS
= 50Ù;starting T
mb
= 25
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
I
DR
I
DRM
E
DS(AL)S
R
th j-mb
R
th j-a
159
75
638
300
-55 to 175
159
75
638
852
0.5
50
A
A
A
J
K/W
K/W
Rating
75
75
Unit
V
V
V
A
A
A
W
*2 unclamped inductive load; I
D
= 75 A;V
DS
5 .6 0
1 gate
1 Gate
2 drain
2 Drain
3 source
3 Source
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1
SMD Type
KUK7606-75B
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
Symbol
V
(BR)DSS
Testconditons
I
D
= 0.25 mA; V
GS
= 0 V;T
j
= 25
I
D
= 0.25 mA; V
GS
= 0 V;T
j
= -55
I
D
= 1 mA; V
DS
= V
GS
;T
j
= 25
gate-source threshold voltage
V
GS(th)
I
D
= 1 mA; V
DS
= V
GS
;T
j
= 175
I
D
= 1 mA; V
DS
= V
GS
;T
j
= -55
Zero gate voltage drain current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
I
DSS
I
GSS
R
DSon
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
from drain lead 6 mm from package to centre
of die
V
DD
= 30 V; R
L
= 1.2Ù;V
GS
= 10 V; R
G
= 10Ù
V
GS
= 0 V; V
DS
= 25 V;f = 1 MHz
V
GS
= 10 V; V
DD
= 60 V;I
D
= 25 A
V
DS
= 30 V; V
GS
= 0 V;T
j
= 25
V
DS
= 30 V; V
GS
= 0 V;T
j
= 175
V
GS
=
20 V; V
DS
= 0 V
Min
75
70
2
1
Transistors
IC
Typ
Max
Unit
V
V
3
4
V
V
4.4
0.02
1
500
2
4.8
100
5.6
11.8
91
19
28
5585
845
263
36
56
128
48
4.5
2.5
7446
1014
360
V
ìA
ìA
nA
mÙ
mÙ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
GS
= 10 V; I
D
= 25 A;T
j
= 25
V
GS
= 10 V; I
D
= 25 A;T
j
= 175
internal drain inductance
L
d
internal source inductance
source-drain (diode forward) voltage
reverse recovery time
recovered charge
L
s
V
SD
t
rr
Q
r
from source lead to source bond pad
I
s
= 40A; V
GS
= 0 V
I
S
= 20 A; -d
IF
/d
t
= -100 A/ìs;
V
GS
= -10 V; V
DS
= 30 V
7.5
0.85
86
253
1.2
V
ns
nC
2
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