SMD Type
PNP General Purpose Transistors
BCF29,BCF30
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Low current (max. 100 mA).
Low voltage (max. 32 V).
+0.1
1.3
-0.1
Features
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th j-a
Rating
-32
-32
-5
-100
-200
-100
250
-65 to +150
150
-65 to +150
500
K/W
Unit
V
V
V
mA
mA
mA
mW
0-0.1
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1
SMD Type
BCF29,BCF30
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
BCF29
BCF30
DC current gain
BCF29
BCF30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -50 mV; I
B
= -2.5 mA
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
Noise figure
V
BE(sat)
V
BE
C
C
f
T
NF
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -50 mA; I
B
= -2.5 mA
I
C
= -2 mA; V
CE
= -5 V
I
E
= ie = 0; V
CB
= -10 V; f = 1 MHz
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
I
C
= -200 ìA; V
CE
= -5 V; R
S
= 2 kÙ;
f = 1 kHz; B = 200 Hz
100
-600
h
FE
I
C
= -2 mA; V
CE
= -5 V
120
215
Symbol
I
CBO
I
CBO
I
EBO
h
FE
Testconditons
I
E
= 0; V
CB
= -32 V
I
E
= 0; V
CB
= -32 V; T
j
= 100
I
C
= 0; V
EB
= -5 V
I
C
= -10 ìA; V
CE
= -5 V
Min
Transistors
IC
Typ
Max
-100
-10
-100
Unit
nA
ìA
nA
90
150
260
500
-80
-150
-720
-810
-750
4.5
-300
mV
mV
mV
mV
mV
pF
MHz
1
4
dB
h
FE
Classification
TYPE
Marking
BCF29
C7p
BCF30
C8p
2
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