SMD Type
Driver Transistors
MMBTA55,MMBTA56
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
SOT-23 package
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total Device Dissipation FR-5 Board(* 1)
Derate above 25
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate, (* 2)
Derate above 25
Thermal Resistance, Junction-to-Ambient
Junction temperature
Storage temperature
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
R
èJA
P
D
R
èJA
T
j
T
stg
MMBTA55
-60
-60
-4.0
-500
225
1.8
556
300
2.4
417
150
-55 to +150
MMBTA56
-80
-80
Unit
V
V
V
mA
mW
mW/
/W
mW
mW/
/W
0-0.1
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1
SMD Type
MMBTA55,MMBTA56
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage* MMBTA55
MMBTA56
Emitter-base breakdown voltage
Base cutoff current
Collector cutoff current
MMBTA55
MMBTA56
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current-gain-bandwidth product
* Pulse test: pulse width
300 ìs, duty cycle
H
FE
V
CE(
sat)
V
BE(on
)
f
T
2.0%.
V
(BR)EBO
I
CES
I
CBO
I
E
= -100 ìA, I
C
= 0
V
CE
= -60 V, I
B
= 0
V
CB
= -60 V, I
E
= 0
V
CB
= -80 V, I
E
= 0
I
C
= -10 mA, V
CE
= -1.0 V
I
C
= -100 mA, V
CE
= -1.0 V
I
C
= -100 mA, I
B
= -10 mA
I
C
= -100 mA, V
CE
= -1.0 V
I
C
= -100 mA, V
CE
= -1.0 V, f = 100
MHz
Symbol
V
(BR)CEO
Testconditons
I
C
= -1.0 mA, I
B
= 0
Transistors
IC
Min
-60
-80
-4.0
Typ
Max
Unit
V
V
V
-0.1
-0.1
-0.1
100
100
-0.25
-1.2
50
ìA
ìA
ìA
V
V
MHz
h
FE
Classification
TYPE
Marking
MMBTA55
2H
MMBTA56
2G
2
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