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MMBTA56

Description
500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size39KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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MMBTA56 Overview

500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR

MMBTA56 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.5000 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor100
Rated crossover frequency50 MHz
SMD Type
Driver Transistors
MMBTA55,MMBTA56
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
SOT-23 package
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total Device Dissipation FR-5 Board(* 1)
Derate above 25
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina Substrate, (* 2)
Derate above 25
Thermal Resistance, Junction-to-Ambient
Junction temperature
Storage temperature
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
R
èJA
P
D
R
èJA
T
j
T
stg
MMBTA55
-60
-60
-4.0
-500
225
1.8
556
300
2.4
417
150
-55 to +150
MMBTA56
-80
-80
Unit
V
V
V
mA
mW
mW/
/W
mW
mW/
/W
0-0.1
www.kexin.com.cn
1

MMBTA56 Related Products

MMBTA56 MMBTA55
Description 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum collector current 0.5000 A 0.5000 A
Maximum Collector-Emitter Voltage 80 V 80 V
Processing package description PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating tin lead tin lead
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
transistor applications amplifier amplifier
Transistor component materials silicon silicon
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 100 100
Rated crossover frequency 50 MHz 50 MHz
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