SMD Type
Transistors
PNP Silicon Power Switching Transistor
FCX718
Features
2W power dissipation.
6A peak pulse current.
Excellent H
FE
characteristics up to 6 Amps.
Extremely low saturation voltage E.g. 16mv Typ.
Extremely low equivalent on-resistance.
R
CE(sat)
96mÙ at 2.5A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
-20
-20
-5
-6
-2.5
-500
1
-55 to +150
Unit
V
V
V
A
A
mA
W
www.kexin.com.cn
1
SMD Type
FCX718
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cut-off current
Collector Emitter Cut-Off Current
Emitter Cut-Off Current
Symbol
V
(BR)CBO
I
C
=-100ìA
V
(BR)CEO
I
C
=-10mA
V
(BR)EBO
I
E
=-100ìA
I
CBO
I
CES
I
EBO
V
CB
=-10V
V
CE
=-10V
V
EB
=-4V
Testconditons
Transistors
Min
-20
-20
-5
Typ
-65
-55
-8.8
Max
Unit
V
V
V
-100
-100
-100
-12
-110
-230
-40
-200
-220
-300
-1.1
nA
nA
nA
Collector-emitter saturation voltage *
I
C
=-0.1A, I
B
=-10mA
V
CE(
sat) I
C
=-1A, I
B
=-20mA
I
C
=-1.5A, I
B
=-50mA
I
C
=-2.5A, I
B
=-200mA
V
BE(
sat) I
C
=-3A, I
B
=-50mA
V
BE(on
) I
C
=-3A, V
CE
=-2V
I
C
=-10mA,V
CE
=-2V
I
C
=-0.1A,V
CE
=-2V
I
C
=-2A,V
CE
=-2V
I
C
=-4A,V
CE
=-2V
I
C
=-6A,V
CE
=-2V
I
C
=-50mA, V
CE
=-10V, f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-0.75A, V
CC
=-15V
I
B1
=I
B2
=15mA
300
300
150
35
15
150
mV
Base-emitter saturation voltage *
Base-emitter ON voltage *
-0.98
V
V
-0.85 -0.95
475
450
230
70
30
180
21
40
670
30
Static Forward Current Transfer Ratio*
h
FE
Transitional frequency
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
f
T
C
obo
t
(on)
t
(off)
MHz
pF
ns
ns
Marking
Marking
718
2
www.kexin.com.cn
京公网安备 11010802033920号
EEWORLD
