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2SJ492

Description
MOS Field Effect Transistor
File Size47KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

2SJ492 Overview

MOS Field Effect Transistor

SMD Type
MOS Field Effect Transistor
2SJ492
TO
-
263
+0.1
1.27
-0.1
MOSFET
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low on-state resistance
R
DS(on)1
= 100 m
R
DS(on)2
= 185 m
(MAX.) (V
GS
= -10 V, I
D
= -10 A)
+0.2
8.7
-0.2
(MAX.) (V
GS
=-4 V, I
D
=-10 A)
Low C
iss
: C
iss
= 1210 pF (TYP.)
Built-in gate protection diode
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage (AC)
Gate to source voltage (DC) *1
Drain current (DC)
Drain current(pulse) *2
Power dissipation
T
A
=25
T
C
=25
Channel temperature
Storage temperature
Channel to Case
Channel to Ambient
*1 f = 20 kHz, Duty Cycle
* 2 PW
10
s; d
1%.
10% (+Side)
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
D
P
D
P
D
T
ch
T
stg
R
th(ch-C)
R
th(ch-A)
Rating
-60
20
-20
20
80
1.5
70
150
-55 to +150
1.79
83.3
/W
/W
Unit
V
V
V
A
A
W
W
5.60
1 Gate
2 Drain
3 Source
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