Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220Fa package
・High
voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching
regulators
・Motor
control systems
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
BUT18F BUT18AF
・
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
CONDITIONS
BUT18F
Collector-base voltage
BUT18AF
BUT18F
Open emitter
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
HA
INC
Emitter-base voltage
Collector current
Base current
Base current-peak
Collector-emitter voltage
ES
NG
BUT18AF
Open base
MIC
E
DUC
ON
VALUE
850
OR
T
UNIT
V
1000
400
V
450
9
6
12
3
6
V
A
A
A
A
W
℃
℃
Open collector
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
33
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUT18F
V
CEO(SUS)
Collector-emitter
sustaining voltage
BUT18AF
V
CEsat
Collector-emitter saturation voltage
I
C
=4A; I
B
=0.8A
I
C
=0.1A; I
B
=0;L=25mH
CONDITIONS
BUT18F BUT18AF
MIN
400
TYP.
MAX
UNIT
V
450
1.5
V
V
BEsat
Base-emitter saturation voltage
BUT18F
I
C
=4A; I
B
=0.8A
V
CE
=850V ;V
BE
=0
T
j
=125℃
V
CE
=1000V ;V
BE
=0
T
j
=125℃
V
EB
=9V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
10
1.3
1.0
2.0
V
I
CES
Collector
cut-off current
BUT18AF
mA
1.0
2.0
10
35
mA
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
固电
IN
DC current gain
导½
半
ANG
CH
MIC
E SE
I
C
=4A; I
B1
=-I
B2
=0.8A
V
CC
=250V
OR
UCT
ND
O
10
35
1.0
4.0
0.8
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUT18F BUT18AF
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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