Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
voltage,fast speed
・Low
collector saturation voltage
APPLICATIONS
・Specially
intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
固电
IN
导½
半
PARAMETER
CONDITIONS
Open emitter
BUW12
Collector-base voltage
BUW12A
BUW12
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
BUW12A
MIC
E SE
Open base
Open collector
OR
UCT
ND
O
VALUE
850
1000
400
450
9
8
20
4
UNIT
V
V
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.2
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUW12
I
C
=0.1A ; I
B
=0; L=25mH
BUW12A
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
BUW12
BUW12A
I
EBO
h
FE
Emitter cut-off current
DC current gain
I
C
=6A; I
B
=1.2A
I
C
=6A; I
B
=1.2A
V
CE
=850V; V
BE
=0
CONDITIONS
BUW12 BUW12A
MIN
400
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
450
1.5
1.5
V
V
I
CES
Collector
cut-off current
1.0
V
CE
=1000V; V
BE
=0
V
EB
=9V; I
C
=0
I
C
=1A ; V
CE
=5V
15
10
50
mA
mA
Switching times resistive load
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
HA
INC
ES
NG
I
C
=6A ;I
B1
=-I
B2
=1.2A
V
CC
=240V
MIC
E
OR
UCT
ND
O
1.0
4.0
0.8
μs
μs
μs
2
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