Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
voltage,high speed
APPLICATIONS
・Converters
・Inverters
・Switching
regulators
・Motor
control systems
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
BUW13 BUW13A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
固电
导½
半
PARAMETER
CONDITIONS
BUW13
Collector-base voltage
BUW13A
BUW13
Open emitter
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
HA
INC
Emitter-base voltage
Collector current
Base current
Base current-peak
Collector-emitter voltage
ES
NG
BUW13A
Open base
MIC
E
DUC
ON
VALUE
850
OR
T
1000
400
450
9
15
30
6
9
UNIT
V
V
Open collector
V
A
A
A
A
W
℃
℃
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
175
150
-65~175
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUW13
V
CEO(SUS)
Collector-emitter
sustaining voltage
BUW13A
BUW13
V
CEsat
Collector-emitter
saturation voltage
BUW13A
BUW13
V
BEsat
Base-emitter
saturation voltage
BUW13A
I
CES
I
EBO
h
FE-1
h
FE-2
Collector cut-off current
Emitter cut-off current
I
C
=10A; I
B
=2A
I
C
=0.1A ; I
B
=0; L=25mH
CONDITIONS
BUW13 BUW13A
MIN
400
TYP.
MAX
UNIT
V
450
1.5
I
C
=8A; I
B
=1.6A
I
C
=10A; I
B
=2A
1.6
I
C
=8A; I
B
=1.6A
V
CE
=Rated V
CES
; V
BE
=0
TC=125℃
V
EB
=9V; I
C
=0
I
C
=20mA ; V
CE
=5V
10
1.0
4.0
10
V
V
mA
mA
固电
IN
DC current gain
DC current gain
导½
半
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
ANG
CH
MIC
E SE
For BUW13
I
C
=10A ;I
B1
=-I
B2
=2A
For BUW13A
I
C
=8A ;I
B1
=-I
B2
=1.6A
I
C
=1.5A ; V
CE
=5V
OR
UCT
ND
O
35
10
35
1.0
4.0
0.8
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUW13 BUW13A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10mm)
3
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