INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4308
DESCRIPTION
·Low
Noise
·High
Gain Bandwidth Product
APPLICATIONS
·Designed
for use in VHF wide band amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
20
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
300
mA
I
CM
Collector Current-Peak
500
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.6
W
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC4308
TYP.
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100μA ; I
E
= 0
30
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1mA ; R
BE
=
∞
20
V
I
CBO
Collector Cutoff Current
V
CB
= 25V; I
E
= 0
1
μA
I
EBO
Emitter Cutoff Current
V
EB
= 3V; I
C
= 0
10
μA
h
FE
DC Current Gain
I
C
= 50mA ; V
CE
= 5V
50
200
f
T
Current-Gain—Bandwidth Product
I
C
= 50mA ; V
CE
= 5V
1.5
2.5
GHz
C
OB
Output Capacitance
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
4.0
pF
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4308
isc Website:www.iscsemi.cn