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2SC4308

Description
isc Silicon NPN RF Transistor
File Size102KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC4308 Overview

isc Silicon NPN RF Transistor

INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4308
DESCRIPTION
·Low
Noise
·High
Gain Bandwidth Product
APPLICATIONS
·Designed
for use in VHF wide band amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
30
V
V
CEO
Collector-Emitter Voltage
20
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
300
mA
I
CM
Collector Current-Peak
500
mA
P
C
Collector Power Dissipation
@T
C
=25℃
0.6
W
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn

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