BU807FI datasheet, PDF - EEWORLD Datasheet

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BU807FI: Description8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220; Categorysemiconductor Discrete semiconductor; File Size72KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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BU807FI Overview

8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220

BU807FI Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	8 A
Maximum Collector-Emitter Voltage	150 V
Processing package description	TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Shell connection	ISOLATED
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Darlington Power Transistor

BU807FI

DESCRIPTION

·High

Voltage: V

CBO

= 330V(Min)

·Low

Saturation Voltage-

: V

CE(sat)

= 1.5V(Max)@ I

C

= 5A

APPLICATIONS

·Designed

for use in horizontal deflection circuits in TV’s

and CRT’s.

ABSOLUTE MAXIMUM RATINGS(T

a

=25

℃)

SYMBOL

PARAMETER

VALUE

UNIT

V

CBO

Collector-Base Voltage

330

V

CEV

Collector-Emitter Voltage

330

V

CEO

Collector-Emitter Voltage

150

V

EBO

I

C

Emitter-Base Voltage

6

V

Collector Current-Continuous

8

A

I

CM

Collector Current-Peak

15

A

I

B

Base Current

Collector Power Dissipation

@ T

C

=25℃

Junction Temperature

2

A

P

C

30

W

℃

T

J

150

T

stg

Storage Temperature Range

-55~150

isc Website：www.iscsemi.cn

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