INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUW131H
DESCRIPTION
·High
Switching Speed
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 450V
APPLICATIONS
·Designed
for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage
(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
MAX
850
450
6
8
16
6
12
125
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)
I
CEV
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 0.1A ; I
B
= 0; L= 10mH
I
C
= 3A; I
B
= 0.3A
B
BUW131H
MIN
450
TYP.
MAX
UNIT
V
1.0
2.5
1.5
0.25
1.5
1
7
200
V
V
V
mA
mA
I
C
= 5A; I
B
= 0.5A
B
I
C
= 5A; I
B
= 0.5A
B
V
CE
=V
CESMmax
;V
BE
=-1.5V
V
CE
=V
CESMmax
;V
BE
=-1.5V;T
J
=100℃
V
EB
= 6V; I
C
= 0
I
C
= 5A ; V
CE
= 5V
I
E
= 0 ; V
CB
= 10V; f
test
= 1kHz
pF
Switching Times , Resistive Load
t
on
t
stg
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 3A ;I
B1
= 0.3A;I
B2
= -0.6A
0.4
1.5
0.1
μs
μs
μs
isc Website：www.iscsemi.cn
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