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MJ16010

Description
Silicon NPN Power Transistors
File Size114KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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MJ16010 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage ,high speed
APPLICATIONS
・Switching
Regulators
・Inverters
・Solenoids
・Relay
Drivers
・Motor
Controls
・Deflection
Circuits
PINNING (see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
MJ16010
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
固电
导½
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total Power Dissipation
Derate above 25℃
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
850
450
6
15
20
10
15
UNIT
V
V
V
A
A
A
A
W
W/℃
T
C
=25℃
175
1.0
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W

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