Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA765
DESCRIPTION
·With
TO-66 package
·Low
collector saturation voltage
APPLICATIONS
·Desinged
for general-purpose power
amplifier and applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-80
-80
-6
-6
40
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA765
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-80
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-1mA ;I
E
=0
-80
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-80V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-10
μA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-4V
50
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-12V
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA765
Fig.2 outline dimensions
3
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