Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2556 2SC2556A
DESCRIPTION
・With
TO-126 package
・High
V
CBO
・Low
collector saturation voltage
・High
transition frequency
APPLICATIONS
・Audio
frequency output amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
导½
半
V
CBO
HA
INC
Emitter-base voltage
Collector current
Collector-base voltage
ES
NG
2SC2556
2SC2556A
2SC2556
2SC2556A
MIC
E
CONDITIONS
OR
CT
NDU
O
VALUE
130
180
40
UNIT
V
V
CEO
Collector- emitter voltage
50
Open collector
5
1
1.5
T
C
=25℃
1.2
150
-55½+150
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
V
A
A
W
℃
℃
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC2556 2SC2556A
MIN
TYP.
MAX
UNIT
2SC2556
V
(BR)CEO
Collector-emitter
breakdown voltage
2SC2556A
I
C
=2mA ;I
B
=0
40
V
50
2SC2556
V
(BR)CBO
Collector-base
breakdown voltage
2SC2556A
I
C
=10μA ;I
E
=0
130
V
180
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10μA ;I
C
=0
5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=500mA ;I
B
=50mA
0.5
V
μA
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
h
FE-1
h
FE-2
电半
固
DC current gain
DC current gain
导½
I
C
=1A ; V
CE
=0.5V
C
OB
f
T
HA
INC
Output capacitance
Transition frequency
ES
NG
I
C
=0.5A ; V
CE
=2V
I
E
=0; V
CB
=20V;f=1MHz
MIC
E
OR
CT
NDU
O
150
350
150
30
200
0.1
pF
I
C
=50mA ; V
CE
=10V
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2556 2SC2556A
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
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