Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1102
DESCRIPTION
·With
TO-3PN package
·Complement
to type 2SC2577
·High
current capability
·High
power dissipation
APPLICATIONS
·Audio
power amplifer applications
·DC-DC
converters
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-6
-6
60
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1102
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-80
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
-1.8
V
I
CBO
Collector cut-off current
V
CB
=-80V; I
E
=0
-100
μA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-100
μA
h
FE
DC current gain
I
C
=-2A ; V
CE
=4V
50
f
T
Transition frequency
I
E
=1A ; V
CE
=-12V
20
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1102
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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