Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD882
APPLICATIONS
・Suited
for the output stage of 3 watts
audio amplifier ,voltage regulator ,DC-
DC converter and relay driver
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-40
-30
-5
-3
-7
UNIT
V
V
V
A
A
Open collector
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.0
W
10
150
-55~150
℃
℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-2.0A; I
B
=-0.2A
I
C
=-2.0A ;I
B
=-0.2A
V
CB
=-30V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-2V
I
C
=-1A ; V
CE
=-2V
I
C
=-0.1A ; V
CE
=-5V
30
60
80
MIN
-30
-0.3
-1.0
TYP.
2SB772
MAX
UNIT
V
-0.5
-2.0
-1.0
-1.0
V
V
μA
μA
400
MHz
pF
固电
Q
Collector output capacitance
导½
半
P
I
E
=0; f=1MHz ; V
CB
=-10V
h
FE-2
Classifications
R
60-120
CH
IN
100-200
160-320
ANG
E
MIC
E SE
OR
UCT
ND
O
55
200-400
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB772
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
5