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2SB772

Description
Si, SMALL SIGNAL TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size177KB,5 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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Si, SMALL SIGNAL TRANSISTOR, TO-126

2SB772 Parametric

Parameter NameAttribute value
Number of terminals3
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption1.25 W
Transistor typeUniversal small signal
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB772
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD882
APPLICATIONS
・Suited
for the output stage of 3 watts
audio amplifier ,voltage regulator ,DC-
DC converter and relay driver
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
固电
导½
Collector-base voltage
HA
INC
Emitter-base voltage
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-40
-30
-5
-3
-7
UNIT
V
V
V
A
A
Open collector
Collector current (DC)
Collector current-Peak
T
a
=25℃
1.0
W
10
150
-55~150
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature

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