INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
3DD301D
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 150V(Min)
·Collector-Emitter
Saturation Voltage-
: V
CE(sat)
= 1.5V(Max) @I
C
= 3A
APPLICATIONS
·Designed
for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
300
V
V
CEO
Collector-Emitter Voltage
150
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
5
A
P
C
30
W
℃
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th
j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
3DD301D
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA; I
B
= 0
B
150
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
6
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 5mA; I
E
= 0
300
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.3A
B
1.5
V
I
CBO
Collector Cutoff Current
V
CB
= 50V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
= 0
0.1
mA
h
FE
DC Current Gain
I
C
= 3A; V
CE
= 5V
30
120
t
f
Fall Time
I
C
= 3A; I
B1
= 0.2A; I
B2
= -0.3A
1
μs
isc Website：www.iscsemi.cn
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