BD441 datasheet, PDF - EEWORLD Datasheet

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BD441: Description4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; Categorysemiconductor Discrete semiconductor; File Size113KB，3 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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BD441 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD441 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	80 V
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Transistor type	universal power supply
Minimum DC amplification factor	15
Rated crossover frequency	3 MHz

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Product Specification

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-3 package

・High

DC current gain

・DARLINGTON

APPLICATIONS

・Designed

for use in power switching

application.

PINNING (See Fig.2)

Base

Emitter

Collector

DESCRIPTION

PMD16K60/80/100

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25

℃

)

SYMBOL

PARAMETER

CONDITIONS

PMD16K60

PMD16K80

CBO

固电

Collector-base voltage

导½

半

CEO

EBO

stg

INC

Collector current

Base current

Power dissipation

Collector-emitter voltage

PMD16K60

PMD16K80

PMD16K100

MIC

Open base

Open collector

Open emitter

NDU

100

0.5

VALUE

UNIT

Emitter-base voltage

℃

Collector current(peak)

=25℃

200

-65~200

Max. operating Junction temperature

Storage temperature

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance from junction to case

MAX

0.875

UNIT

℃/W

BD441 Related Products

	BD441	PMD16K100	PMD16K60	PMD16K80	BD439
Description	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals	3	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN	NPN
Maximum collector current	4 A	4 A	4 A	4 A	4 A
Maximum Collector-Emitter Voltage	80 V	80 V	80 V	80 V	80 V
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	tin lead	tin lead	tin lead	tin lead	tin lead
Terminal location	single	single	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single	single	single
Shell connection	isolation	isolation	isolation	isolation	isolation
Number of components	1	1	1	1	1
transistor applications	switch	switch	switch	switch	switch
Transistor component materials	silicon	silicon	silicon	silicon	silicon
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply	universal power supply
Minimum DC amplification factor	15	15	15	15	15
Rated crossover frequency	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz

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